6
RF Device Data
Freescale Semiconductor
MRF7S21210HR3 MRF7S21210HSR3
Figure 3. Test Circuit Schematic ? MRF7S21210HSR3
Z12 0.044″
x 0.613″
Microstrip
Z13 0.398″
x 0.102″
Microstrip
Z14 0.071″
x 0.220″
Microstrip
Z15 0.071″
x 0.220″
Microstrip
Z16 0.439″
x 0.066″
Microstrip
Z17 0.764″
x 0.066″
Microstrip
Z18 0.353″
x 0.090″
Microstrip
Z19 0.797″
x 0.090″
Microstrip
Z20, Z21 0.660″
x 0.120″
Microstrip
PCB Taconic RF35, 0.030?,
εr
=3.5
Z1 0.402″
x 0.066″
Microstrip
Z2 0.840″
x 0.076″
Microstrip
Z3 0.029″
x 0.076″
Microstrip
Z4 0.059″
x0.118″
Microstrip
Z5 0.059″
x0.118″
Microstrip
Z6 0.029″
x 0.076″
Microstrip
Z7 0.194″
x 0.076″
Microstrip
Z8 0.510″
x 0.533″
Microstrip
Z9 0.114″
x 0.533″
Microstrip
Z10 0.139″
x 1.268″
Microstrip
Z11 0.304″
x 1.201″
Microstrip
VBIAS
VSUPPLY
RF
Z17
OUTPUT
RF
INPUT
DUT
C1
C2
R1
Z1
Z2
Z3
Z4
C5
Z5
R2
Z18
R3
Z9
Z11
Z12
Z13
Z14
Z15
C4
C6
Z6
Z16
C14
C13
C15
Z20
C10
C11
C19
Z21
+
Z10
Z7
Z8
C12
C16
C17
C20
+
C18
Z19
C9
C8
C7
C3
Table 6. Test Circuit Component Designations and Values ? MRF7S21210HSR3
Part
Description
Part Number
Manufacturer
C1, C9, C11, C12, C17, C18
10
μF, 50 V Chip Capacitors
C5750X5R1H106MT
TDK
C2, C8
100 nF Chip Capacitors
12065C104KAT
AVX
C3, C7, C10, C13, C14, C16
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C5
5.6 pF Chip Capacitor
ATC100B5R6BT500XT
ATC
C6
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C15
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C19, C20
470
μF Electrolytic Capacitors
2222 12018471
BC Components
R1, R2
10 K?, 1/4 W Chip Resistors
WCR120610KL
Welwyn
R3
10
?, 1/4 W Chip Resistor
232272461009
Phycomp
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相关代理商/技术参数
MRF7S27130HR3 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S27130HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S27130HR5 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S27130HSR3 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S27130HSR5 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35015HSR3 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35015HSR3_11 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF7S35015HSR5 功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray